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  1. Unilateralization of MMIC distributed amplifiers
Unilateralization of MMIC distributed amplifiers
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Unilateralization of MMIC distributed amplifiers

Nikandish, G.

  1. DOI:10.1109/TMTT.2014.2361341
  2. Main Entry: Nikandish, G.
  3. Title:Unilateralization of MMIC distributed amplifiers.
  4. Abstract:This paper presents an unilateralization technique for distributed amplifiers (DAs) based on the transformer coupling between the gate and drain lines. Theoretical analysis of the DA indicates that the voltage waves in the gate and drain lines can be described by a system of linear partial differential equations. The transformer coupling between the lines allows for cancellation of the reverse transmission coefficient of the system. There is an optimal value for the coupling coefficient between the lines that unilateralizes the DA. This optimal coupling coefficient is derived in terms of the gate-drain capacitance and capacitances of the gate and drain lines. Using the proposed technique, two monolithic microwave integrated circuit DAs are designed and implemented in a 0.1-mu{hbox {m}} GaAs pHEMT process. The first DA provides average gain of 10 dB and 3-dB bandwidth (BW) of 39 GHz. The amplifier exhibits the minimum noise figure (NF) of 2.3 dB and the maximum output 1-dB compression point ({ P}-{1 {m {dB}}}) of 14.0 dBm, while consuming 80 mW from a 2-V supply. The second amplifier, composed of two cascaded coupled-line DAs, provides average gain of 19.2 dB, 3-dB BW of 37.5 GHz, the minimum NF of 2.3 dB, and the maximum { P}-{1 {m {dB}}} of 12.6 dBm. It consumes 131 mW from a 2-V supply. The designed amplifiers can operate with supply voltages as low as 0.5 V to reduce power consumption, while their gain, BW, and NF are preserved. The maximum ratio of gain-bandwidth product to power consumption {m GBW/P}m dc of 11.9 GHz/mW is provided by the cascaded DA
  5. Notes:Sharif Repository
  6. Subject:Broadband amplifier.
  7. Subject:Distributed amplifier (DA)
  8. Subject:High electron-mobility transistor (HEMT)
  9. Subject:Transformer.
  10. Subject:Amplifiers (electronic)
  11. Subject:Bandwidth.
  12. Subject:Broadband amplifiers.
  13. Subject:Capacitance.
  14. Subject:Differential equations.
  15. Subject:Electric lines.
  16. Subject:High electron mobility transistors.
  17. Subject:Microwave amplifiers.
  18. Subject:Noise figure.
  19. Subject:1dB compression point.
  20. Subject:Gain-bandwidth products.
  21. Subject:Gate-drain capacitance.
  22. Subject:Linear partial differential equations.
  23. Subject:Monolithic microwave integrated circuits (MMIC)
  24. Subject:Transmission coefficients.
  25. Added Entry:Medi, A.
  26. Added Entry:Sharif University of Technology.
  27. Source: IEEE Transactions on Microwave Theory and Techniques ; Vol. 62, issue. 12 , 2014 , pp. 3041-3052 ; ISSN: 00189480
  28. Web Site:http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6928503

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