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  1. ساخت و بررسی خواص تریبولوژیکی مواد اصطکاکی پایه لاستیک با ضریب اصطکاک پایین (ویژگی)
  2. CdO/PSi/Si photo detector (ویژگی)
  3. جستجو ساده
  4. نتيجه جستجو
CdO/PSi/Si photo detector
592 مرتبه مشاهده شده

CdO/PSi/Si photo detector

Azarian, A.

  1. Main Entry: Azarian, A.
  2. Title:CdO/PSi/Si photo detector.
  3. Publisher:2009.
  4. Abstract:In spite of various works which were carried out on CdO and porous Si (PSi) separately, the interesting properties of CdO/PSi/Si system are not known well. In this work, we study the photoconductivity of deposited CdO layer on PSi/Si system. PS and CdO layers were prepared by electrochemical anodisation of p-type crystalline silicon and pulsed laser deposition (PLD) of cadmium oxide target. Then samples were annealed in air at 500°C to increase their optical transmissions to a value as large as 90% for wavelengths above 700 nm. The XRD study reveals that the annealed films are polycrystalline with grain size of about 25 nm. SEM micrograph of the CdO/PSi/Si system indicates that CdO layer has sub micron granular structure on nano-porous silicon structure. The spectral responsivity of the photodiodes was measured in Vis.-near IR region. The light sensitivity showed linear behaviour vs. reversebias voltage from 0.1 V to 3 V. The dark and photocurrent characteristics of CdO/PSi/Si structure showed ms response time. Experimental data shows that samples have good response to near infrared wavelengths
  5. Notes:Sharif Repository
  6. Subject:CDO Layer.
  7. Subject:Photo detector.
  8. Subject:Porous silicon.
  9. Subject:Annealed films.
  10. Subject:Anodisation.
  11. Subject:Cadmium oxide.
  12. Subject:Crystalline silicons.
  13. Subject:Experimental data.
  14. Subject:Grain size.
  15. Subject:Granular structuress.
  16. Subject:Nano-porous silicon.
  17. Subject:Near-infrared wavelength.
  18. Subject:Near-IR.
  19. Subject:Optical transmissions.
  20. Subject:P-type.
  21. Subject:Photocurrent characteristics.
  22. Subject:PLD.
  23. Subject:Polycrystalline.
  24. Subject:Porous si.
  25. Subject:Response time.
  26. Subject:Reverse-bias.
  27. Subject:SEM micrographs.
  28. Subject:Spectral responsivity.
  29. Subject:Sub micron.
  30. Subject:XRD studies.
  31. Subject:Cadmium.
  32. Subject:Cadmium compounds.
  33. Subject:Detectors.
  34. Subject:Electric potential.
  35. Subject:Electrochemical etching.
  36. Subject:Light transmission.
  37. Subject:Programmable logic controllers.
  38. Subject:Pulsed laser deposition.
  39. Subject:Porous silicon.
  40. Added Entry:Iraji zad, A.
  41. Added Entry:Mahdavi, S. M.
  42. Added Entry:Samadpoor, M.
  43. Added Entry:Sharif University of Technology.
  44. Source: International Journal of Nanotechnology ; Volume 6, Issue 10-11 , 2009 , Pages 997-1005 ; 14757435 (ISSN)
  45. Web Site:https://www.inderscience.com/info/inarticle.php?artid=27562

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